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AP6982M - N-Channel MOSFET

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Full PDF Text Transcription

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AP6982M Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package D2 D2 D2 D1 D2 D1 D1 D1 G2 G2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET CH-1 BVDSS RDS(ON) ID 30V 18mΩ 8.8A 30V 25mΩ 7.5A SO-8 SO-8 S2 G1 S2 S1 G1 S1 CH-2 BVDSS RDS(ON) ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings http://www.DataSheet4U.net/ Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±25 8.8 7 30 2.0 0.
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