Datasheet Details
| Part number | AP7811M |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 78.53 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AP7811M Datasheet
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| Part number | AP7811M |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 78.53 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AP7811M Datasheet
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D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G G The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
S S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current Pulsed Drain Current 1 3 Rating 25 ±12 11.8 9.4 30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.
AP7811M Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 25V 12mΩ 11.
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