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AP83T03GM-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

General Description

AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Advanced Power Electronics Corp. AP83T03GM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D D D D SO-8 G SS S Description AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G 30V 6mΩ 16A D S Absolute Maximum Ratings@Tj=25oC.