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Advanced Power Electronics
Advanced Power Electronics

AP90T03GR Datasheet Preview

AP90T03GR Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP90T03GR pdf
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Advanced Power
Electronics Corp.
AP90T03GR
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On- resistance
Simple Drive Requirement
Fast Switching Characteristic
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
30V
4mΩ
75A
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@Tc=25
ID@Tc=100
IDM
PD@Tc=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@4.5V
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
30
±20
75
63
350
96
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
1.3
62
Units
/W
/W
Data and specifications subject to change without notice
200120041



Advanced Power Electronics
Advanced Power Electronics

AP90T03GR Datasheet Preview

AP90T03GR Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP90T03GR pdf
www.DataSheet4U.com
AP90T03GR
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
ID=40A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.5Ω
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
30 - - V
- 0.02 - V/
- - 4 mΩ
- - 6 mΩ
0.8 - 3 V
- 55 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 60 96 nC
- 8.5 - nC
- 38 - nC
- 14 - ns
- 83 - ns
- 66 - ns
- 120 - ns
- 4090 6540 pF
- 1010 - pF
- 890 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 51 - ns
- 63 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.


Part Number AP90T03GR
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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