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AP92T12GP-HF-3 Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The AP92T12GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required.

G D S TO-220 (P) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current 1 Rating 120 ±20 130 120 95 300 375 2 -55 to 150 -55 to 150 Units V V A A A A W W °C °C Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.4 62 Units °C/W °C/W Ordering Information AP92T12GP-HF-3TB RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube) ©2011 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP92T12GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 120V 8.