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AP9402GYT-HF-3 - N-channel Enhancement-mode Power MOSFET

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General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The PMPAK®3x3 package is specially designed for DC-DC converter applications, with a small foot print that offers a backside heat sink and a low package profile.

Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range BV DSS R DS(ON) ID 30V 18mΩ 11.5A D D D D S S S G PMPAK®3x3 Rating 30 ±20 11.5 9.4 40 3.57 -55 to 150 -55 to 150 Units V V A A A W °C °C Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case3 Maximum Thermal Resistance, Junction-ambient3 Value 6 35 Units °C/W °C/W Ordering Information AP9402GYT-HF-3TR RoHS-compliant halogen-free PMPAK®3x3, shipped on tape and reel (3000pcs/reel) ©2010 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP9402GYT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Good Thermal Performance D Low On-resistance RoHS-compliant, halogen-free G.

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