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AP9410GM-HF Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +12 18 15 80 2.5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Continuous Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201009212 Data and specifications subject to change without notice AP9410GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=18A VGS=4.5V, ID=12A VGS=2.5V, ID=6A Min.

Overview

AP9410GM-HF Halogen-Free Product Advanced Power Electronics Corp.

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