Datasheet Details
| Part number | AP9452G |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 104.86 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet |
 AP9452G Datasheet
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| Part number | AP9452G |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 104.86 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet |
AP9452G Datasheet
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The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D S SOT-89 D G Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V3 Continuous Drain Current, VGS @ 4.5V3 Pulsed Drain Current 1 Rating 20 ±16 4 2.5 12 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
100 Unit ℃/W Data and specifications subject to change without notice 201224031 AP9452G Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min.
AP9452G Advanced Power Electronics Corp.
▼ Lower gate charge ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement www.DataSheet4U.
| Part Number | Description |
|---|---|
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