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AP9466GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9466GJ, a member of the AP9466GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP9466GJ
Manufacturer Advanced Power Electronics
File Size 228.97 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP9466GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Fast Switching Characteristics G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 40V 13.5mΩ 40A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9466GJ) are available for low-profile applications.
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