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AP9477GK - N-Channel MOSFET

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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AP9477GK Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant SOT-223 G D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S 60V 90mΩ 4.1A ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 60 ±20 4.1 3.3 20 2.8 0.
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