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AP9565BGJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP9565BGJ datasheet PDF. This datasheet also covers the AP9565BGH variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP9565BGH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AP9565BGJ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AP9565BGJ. For precise diagrams, and layout, please refer to the original PDF.

AP9565BGH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCE...

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ve Requirement ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -40V 52mΩ -17A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9565BGJ) is available for low-profile applications.