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AP9567GJ Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

Download the AP9567GJ datasheet PDF. This datasheet also includes the AP9567GH variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP9567GH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP9567GJ) is available for low-profile applications.

G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25к ID@TC=100к IDM PD@TC=25к TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -40 ±25 -22 -14 -50 34.7 0.28 -55 to 150 -55 to 150 Units V V A A A W W/ к к к Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

Overview

AP9567GH/J Pb Free Plating Product Advanced Power Electronics Corp.

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