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AP9576GJ Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

Download the AP9576GJ datasheet PDF. This datasheet also includes the AP9576GH variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP9576GH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP9576GJ) is available for low-profile applications.

G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -60 +20 -14 -9 -45 36.8 0.29 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3.4 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200902092 AP9576GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min.

Overview

AP9576GH/J RoHS-compliant Product Advanced Power Electronics Corp.

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