Datasheet Details
| Part number | AP9579GM-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 55.58 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP9579GM-HF Download (PDF) |
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| Part number | AP9579GM-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 55.58 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP9579GM-HF Download (PDF) |
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating -60 +20 -7.3 -5.8 -30 2.5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201110261 Data and specifications subject to change without notice AP9579GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-48V, VGS=0V VGS=+20V, VDS=0V ID=-7A VDS=-30V VGS=-4.5V VDS=-30V ID=-1A RG=3.3Ω VGS=-10V VGS=0V VDS=-15V f=1MHz f=1.0MHz Min.
AP9579GM-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free SO-8 D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S S S G -60V 25mΩ -7.
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|---|---|
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