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AP9581GP-HF Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.

G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -80 +20 -95 -60 -300 250 -55 to 150 -55 to 150 Units V V A A A W o o Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range C C Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.5 62 Units o o C/W C/W 1 Data and specifications subject to change without notice 201107181 AP9581GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-30A VGS=-4.5V, ID=-20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.

Overview

AP9581GP-HF Halogen-Free Product Advanced Power Electronics Corp.