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AP9581GS-HF-3 Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The AP9581GS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.

D (tab) G D S TO-263 (S) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating -80 ±20 -95 -60 -300 250 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 0.5 40 Units °C/W °C/W Ordering Information AP9581GS-HF-3TR : in RoHS-compliant, halogen-free TO-263, shipped on tape and reel (800 pcs/reel) ©2010 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP9581GS-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-Resistance Fast Switching Performance RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -80V 15mΩ.