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AP95T07GP Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.

G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating 75 ±20 80 70 320 300 2 4 Units V V A A A W W/℃ mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 450 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 0.5 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 201120071 AP95T07GP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 2 Min.

Overview

AP95T07GP RoHS-compliant Product Advanced Power Electronics Corp.

▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast www.DataSheet4U.

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