Datasheet Details
| Part number | AP95T10GP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 91.73 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP95T10GP-HF Datasheet
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| Part number | AP95T10GP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 91.73 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP95T10GP-HF Datasheet
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G The TO-220 package is widely preferred for commercial-industrial through-hole applications.
D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TC=25℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Package Limited) Rating 100 +20 150 108 120 600 375 -55 to 175 -55 to 175 Units V V A A A A W ℃ ℃ Pulsed Drain Current 1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 0.4 62 Units ℃/W ℃/W 1 201202152 Data and specifications subject to change without notice AP95T10GP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=60A VDS=VGS, ID=250uA VDS=10V, ID=60A VDS=100V, VGS=0V VGS= +20V, VDS=0V ID=40A VDS=80V VGS=10V VDS=50V ID=40A RG=25Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min.
AP95T10GP-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 6.
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