Datasheet Details
| Part number | AP95U03GMT-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 54.27 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP95U03GMT-HF Datasheet
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| Part number | AP95U03GMT-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 54.27 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP95U03GMT-HF Datasheet
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□ Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink.
S S S G ® PMPAK 5x6 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip), V GS @ 10V Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 30 +12 90 28 22 240 50 5 -55 to 150 -55 to 150 Units V V A A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 2.5 25 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201011161 AP95U03GMT-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Min.
AP95U03GMT-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part Number | Description |
|---|---|
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