Datasheet4U Logo Datasheet4U.com

AP9950GP - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for commercial-industrial through-hole applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP9926A 20V N+N-Channel Enhancement Mode MOSFET APM
AP9971AGM Dual N-Channel MOSFET VBsemi
AP9971GH N-Channel MOSFET VBsemi
AP9971GI-HF N-Channel 60V MOSFET VBsemi
AP9972GS N-Channel 60V MOSFET VBsemi

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP9950AGH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9950AGP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9952GP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9912H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9912J N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP9950GP RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 70V 12mΩ 70A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 70 +20 70 45 240 113.
Published: |