AP9962AGH-HF-3
AP9962AGH-HF-3 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness.
D (tab)
TO-252 (H)
The AP9962AGH-HF-3 is in the TO-252 package which is widely preferred for mercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP9962AGJ-HF-3) is available where a small PCB footprint is required.
D (tab)
TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 40 ± 20 32 20 120 27.8 0.22 -55 to 150 -55 to 150
Units V V A A A W W/ °C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
Unit
4.5 62.5 110
°C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
Ordering Information
AP9962AGH-HF-3TR : in Ro HS-pliant, halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) AP9962AGJ-HF-3TB : in Ro HS-pliant, halogen-free TO-251 shipped in tubes (80pcs/tube)
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200906104-3 1/6
Advanced Power Electronics Corp.
AP9962AGH/J-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250u A VGS=10V, ID=20A VGS=4.5V, ID=16A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o
Min. 40 1
- Typ. 40 12 2.7 7.8 7 46 20 6 820 95 90
Max. Units 20 30 3 10 250 ±100 20 1800 V mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F
VDS=VGS,...