AP9962AGP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is widely preferred for mercial-industrial power applications and suited for low voltage applications such as DC/DC converters. G
TO-220(P)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Rating 40 +20 32 20 120 27.8 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.5 62 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200810282
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