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AP9962M - POWER MOSFET

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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AP9962M Advanced Power Electronics Corp. D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface www.DataSheet4U.com Mount Package D1 D1 BVDSS RDS(ON) G2 40V 25mΩ 7A SO-8 S1 G1 S2 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1,2 3 3 Rating 40 ±20 7 5.5 20 2 0.
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