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Advanced Power Electronics

AP9970GP-HF-3 Datasheet Preview

AP9970GP-HF-3 Datasheet

N-channel Enhancement-mode Power MOSFET

No Preview Available !

Advanced Power
Electronics Corp.
AP9970GP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low On-resistance
D
Fast Switching Performance
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
60V
3.2m
240A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP9970GP-HF-3 is in the TO-220 package, which is widely used
for commercial and industrial applications, and is well-suited for
low voltage applications such as DC/DC converters and motor drives.
The TO-220 through-hole package is often used where a small PCB
footprint or an attached heatsink is required.
G
D
S
TO-220 (P)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
ID at TC=25°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, (Silicon Limited)
Continuous Drain Current, (Silicon Limited)
Continuous Drain Current, (Package Limited)
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Rating
60
±20
240
170
120
960
375
-55 to 175
-55 to 175
Value
0.4
62
Units
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
Ordering Information
AP9970GP-HF-3TB RoHS-compliant, halogen-free TO-220, shipped in tubes
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200907272-3 1/5
Free Datasheet http://www.datasheet4u.net/




Advanced Power Electronics

AP9970GP-HF-3 Datasheet Preview

AP9970GP-HF-3 Datasheet

N-channel Enhancement-mode Power MOSFET

No Preview Available !

Advanced Power
Electronics Corp.
AP9970GP-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=60A
VDS=VGS, ID=250uA
VDS=10V, ID=60A
VDS=60V, VGS=0V
VGS= ±20V, VDS=0V
ID=40A
VDS=48V
VGS=10V
VDS=30V
ID=40A
RG=25, VGS=10V
RD=0.75
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=40A, VGS=0V
IS=40A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
60 - - V
- - 3.2 m
2 - 4V
- 105 -
S
- - 10 uA
- - ±100 nA
- 100 160 nC
- 14 - nC
- 54 - nC
- 60 - ns
- 200 - ns
- 180 - ns
- 240 - ns
- 4020 6430 pF
- 1280 - pF
- 420 - pF
- 2 -
Min. Typ. Max. Units
- - 1.3 V
- 80 - ns
- 165 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test - pulse width < 300µs , duty cycle < 2%
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5
Free Datasheet http://www.datasheet4u.net/


Part Number AP9970GP-HF-3
Description N-channel Enhancement-mode Power MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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