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Advanced Power Electronics

AP9970GW-HF Datasheet Preview

AP9970GW-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP9970GW-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
RoHS Compliant & Halogen-Free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage applications
such as SMPS.
BVDSS
RDS(ON)
ID
G
D
S
60V
3.2mΩ
240A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
+20
240
120
120
480
375
-55 to 175
-55 to 175
Units
V
V
A
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.4
40
Units
/W
/W
1
201012281




Advanced Power Electronics

AP9970GW-HF Datasheet Preview

AP9970GW-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP9970GW-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=60A
VDS=VGS, ID=250uA
VDS=10V, ID=60A
VDS=60V, VGS=0V
VGS= +20V, VDS=0V
ID=40A
VDS=48V
VGS=10V
VDS=30V
ID=40A
RG=25
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
60 - - V
- - 3.2 mΩ
2 - 4V
- 105 -
S
- - 10 uA
- - +100 nA
- 125 200 nC
- 12 - nC
- 74 - nC
- 65 - ns
- 240 - ns
- 250 - ns
- 350 - ns
- 4100 6560 pF
- 1320 - pF
- 650 - pF
- 2 -Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=60A, VGS=0V
IS=10A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 75 - ns
- 175 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP9970GW-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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