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Advanced Power Technology

APT30M75BFLL Datasheet Preview

APT30M75BFLL Datasheet

Power MOSFET

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APT30M75BFLL
APT30M75SFLL
300V 44A 0.075
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
BFLL
TO-247
D3PAK
SFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
• Increased Power Dissipation
D
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
FAST RECOVERY BODY DIODE
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT30M75
300
44
176
±30
±40
329
2.63
-55 to 150
300
44
30
1300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
44
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 22A)
IDSS
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
0.075
250
1000
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts




Advanced Power Technology

APT30M75BFLL Datasheet Preview

APT30M75BFLL Datasheet

Power MOSFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 3
Qgs
Qgd
t d(on)
tr
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
t d(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 44A @ 25°C
VGS = 15V
VDD = 200V
ID = 44A @ 25°C
RG = 0.6
APT30M75 BFLL - SFLL
MIN TYP MAX UNIT
3018
771
pF
43
57
21
nC
23
13
3
ns
20
2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -44A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -44A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -44A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -44A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN TYP MAX UNIT
44
Amps
176
1.3 Volts
8
V/ns
200
ns
400
1.1
µC
2.7
10
Amps
15.1
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.38
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.34mH, RG = 25, Peak IL = 44A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID44A di/dt 700A/µs VR VDSS TJ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.40
0.35
0.9
0.30
0.7
0.25
0.20
0.15
0.10
0.05
0
10-5
0.5
Note:
t1
0.3
t2
Duty Factor D = t1/t2
0.1
Peak TJ = PDM x ZθJC + TC
0.05
SINGLE PULSE
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT30M75BFLL
Description Power MOSFET
Maker Advanced Power Technology
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