Advanced Power Technology APT30M75SFLL
Power MOSFET
MAXIMUM RATINGS
● Increased Power Dissipation D● Easier To Drive
● TO-247 or Surface Mount D3PAK Package G
● FAST RECOVERY BODY DIODE S All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT30M75 300 44 176 ±30 ±40 329 2.63 -55 to 150 300 44 30 1300 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC
ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 44 RDS(o...