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APT40GP60B APT40GP60S
600V
POWER MOS 7 IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
TO-247
®
D3PAK
C
G C
G
E
E
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
7
• 100 kHz operation @ 400V, 41A • 200 kHz operation @ 400V, 26A • SSOA rated
G
C
E
All Ratings: TC = 25°C unless otherwise specified.
APT40GP60B Datasheet
