APT40GP60B2DF2
TYPICAL PERFORMANCE CURVES
600V
POWER MOS 7 IGBT
®
T-Max TM
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
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- Low Conduction Loss
- Low Gate Charge
- Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
- 100 k Hz operation @ 400V, 41A
- 200 k Hz operation @ 400V, 26A
- SSOA rated
All Ratings: TC = 25°C unless otherwise specified.
APT40GP60B2DF2 UNIT
600 ±20 ±30
@ TC = 25°C Volts
100 62 160 160A @ 600V 543 -55 to 150 300
Watts °C Amps
Continuous Collector Current @ TC = 110°C Pulsed Collector Current
@ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C Total...
