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Advanced Power Technology

APT40GP60B2DF2 Datasheet Preview

APT40GP60B2DF2 Datasheet

POWER MOS 7 IGBT

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TYPICAL PERFORMANCE CURVES
APT40GP60APBT402GPD60BF2D2F2
600V
POWER MOS 7® IGBT
T-MaxTM
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
www.DataSheet4LUo.cowm Conduction Loss
• 100 kHz operation @ 400V, 41A
GC E
C
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 200 kHz operation @ 400V, 26A
• SSOA rated
G
E
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT40GP60B2DF2 UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
100
62
160
160A @ 600V
543
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
600
3 4.5 6
2.2 2.7
2.1
500
3000
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
µA
nA
APT Website - http://www.advancedpower.com




Advanced Power Technology

APT40GP60B2DF2 Datasheet Preview

APT40GP60B2DF2 Datasheet

POWER MOS 7 IGBT

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching SOA
td(on)
www.DataSheet4U.ctorm
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 40A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 600V
Inductive Switching (25°C)
VCC(Peak) = 400V
VGE = 15V
IC = 40A
RG = 5
TJ = +25°C
MIN
160
Inductive Switching (125°C)
VCC(Peak) = 400V
VGE = 15V
IC = 40A
RG = 5
TJ = +125°C
APT40GP60B2DF2
TYP
4610
395
25
7.5
135
30
40
MAX
UNIT
pF
V
nC
A
20
29 ns
64
45
385
644 mJ
352 450
20
29 ns
89
69
385
972 mJ
615 950
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RΘJC
RΘJC
WT
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.23
.67 °C/W
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT40GP60B2DF2
Description POWER MOS 7 IGBT
Maker Advanced Power Technology
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