APT40GP60B2DQ2
TYPICAL PERFORMANCE CURVES ®
APT40GP60B2DQ2 APT40GP60B2DQ2G-
APT40GP60B2DQ2(G) 600V
- G Denotes Ro HS pliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
®
T-Max TM
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
- Low Conduction Loss
- Low Gate Charge
- Ultrafast Tail Current shutoff ..
- 100 k Hz operation @ 400V, 41A
- 200 k Hz operation @ 400V, 26A
- SSOA Rated
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
All Ratings: TC = 25°C unless otherwise specified.
APT40GP60B2DQ2(G) UNIT Volts
600 ±20
@ TC = 25°C
100 62 160 160A @ 600V 543 -55 to 150 300
Watts °C Amps
Continuous Collector Current @ TC = 110°C Pulsed Collector Current
@ TC = 150°C
Switching Safe...
