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Advanced Power Technology

APT40GP60B2DQ2 Datasheet Preview

APT40GP60B2DQ2 Datasheet

POWER MOS 7 IGBT

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TYPICAL PERFORMANCE CURVES
®
APT460G0P06V0B2DQ2(G)
APT40GP60B2DQ2
APT40GP60B2DQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
www.DataSheet4UUl.tcroamfast Tail Current shutoff
• 100 kHz operation @ 400V, 41A
• 200 kHz operation @ 400V, 26A
• SSOA Rated
T-MaxTM
GC E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT40GP60B2DQ2(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
100
62
160
160A @ 600V
543
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
600
3 4.5 6 Volts
2.2 2.7
2.1
500
3000
µA
±100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com




Advanced Power Technology

APT40GP60B2DQ2 Datasheet Preview

APT40GP60B2DQ2 Datasheet

POWER MOS 7 IGBT

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA Switching Safe Operating Area
td(on)
www.DataSheet4U.ctorm
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 40A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 600V
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 40A
RG = 5
TJ = +25°C
MIN
160
Inductive Switching (125°C)
VCC =400V
VGE = 15V
IC = 40A
RG = 5
TJ = +125°C
APT40GP60B2DQ2(G)
TYP
4610
395
25
7.5
135
30
40
MAX
UNIT
pF
V
nC
20
29
64
45
385
645
350 450
20
29
90
70
385
970
615 950
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
RθJC
WT
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.23
.67
°C/W
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6RepEeotfiftiisvethReactilnagm:pPeudlsinedwuicdttihvelimtuirtne-dofbfyemnearxgiymmumeajsuunrcetdionintaecmcpoerdraatnucree.with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature/
APT Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT40GP60B2DQ2
Description POWER MOS 7 IGBT
Maker Advanced Power Technology
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