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Advanced Power Technology

APT40GP90B2DQ2 Datasheet Preview

APT40GP90B2DQ2 Datasheet

POWER MOS 7 IGBT

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TYPICAL PERFORMANCE CURVES
®
APT9400G0PV90B2DQ2(G)
APT40GP90B2DQ2
APT40GP90B2DQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
www.DataSheet4UUl.tcroamfast Tail Current shutoff
• SSOA Rated
T-Max®
GC E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT40GP90B2DQ2(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
900
±30
101
50
160
160A @ 900V
543
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
900
3 4.5 6 Volts
3.2 3.9
2.7
350
1500
µA
±100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com




Advanced Power Technology

APT40GP90B2DQ2 Datasheet Preview

APT40GP90B2DQ2 Datasheet

POWER MOS 7 IGBT

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA Switching Safe Operating Area
td(on)
www.DataSheet4U.ctorm
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 450V
IC = 40A
TJ = 150°C, RG = 4.3Ω, VGE =
15V, L = 100µH,VCE = 900V
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 40A
RG = 4.3
TJ = +25°C
MIN
160
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 40A
RG = 4.3
TJ = +125°C
APT40GP90B2DQ2(G)
TYP
3300
325
35
7.5
145
22
55
MAX
UNIT
pF
V
nC
14
23
90
60
TBD
1350
795
14
23
130
90
TBD
2280
1245
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
RθJC
WT
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.23
.61
°C/W
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4
aEdond1inisg
the clamped inductive turn-on energy of the IGBT only,
to the IGBT turn-on loss. Tested in inductive switching
without the effect
test circuit shown
of
in
a commutating diode reverse recovery current
figure 21, but with a Silicon Carbide diode.
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained h


Part Number APT40GP90B2DQ2
Description POWER MOS 7 IGBT
Maker Advanced Power Technology
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