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TYPICAL PERFORMANCE CURVES
APT40GP90J
E C
APT40GP90J
900V
POWER MOS 7 IGBT
®
E G
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
SO
2 T-
27
"UL Recognized"
ISOTOP
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
• SSOA Rated
G
C
E
All Ratings: TC = 25°C unless otherwise specified.
APT40GP90J Datasheet
