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Advanced Power Technology

APT40M70B2LVFR Datasheet Preview

APT40M70B2LVFR Datasheet

POWER MOS V FREDFET

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400V 57A 0.070
APT40M70B2VFR APT40M70LVFR
APT40M70B2VFRG* APT40M70LVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V® FREDFET B2VFR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
www.DataSheet4aUls.coomachieves faster switching speeds through optimized gate layout.
T-MAX
TO-264
LVFR
T-MAX™ or TO-264 Package
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
FAST RECOVERY BODY DIODE
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT40M70B2_LVFR(G)
400
57
228
±30
±40
520
4.16
-55 to 150
300
57
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
400
57
2
0.070
250
1000
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts




Advanced Power Technology

APT40M70B2LVFR Datasheet Preview

APT40M70B2LVFR Datasheet

POWER MOS V FREDFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
www.DataSheet4U.com
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 57A @ 25°C
VGS = 15V
VDD = 200V
ID = 57A @ 25°C
RG = 0.6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -57A)
dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr (IS = -57A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
IRRM
Peak Recovery Current
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
APT40M70B2_LVFR(G)
MIN TYP MAX UNIT
7410 8890
1140
450
1600
675
pF
330 495
40 40 nC
125 190
16 32
16 32 ns
55 80
5 10
MIN TYP MAX UNIT
57 Amps
228
1.3 Volts
15 V/ns
250 ns
500
1.6 µC
5.5
15
27 Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.24
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.54mH, RG = 25, Peak IL = 57A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID57A di/dt 700A/µs VR 400V TJ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
0.1
0.05
0.01
0.005
0.001
10-5
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10


Part Number APT40M70B2LVFR
Description POWER MOS V FREDFET
Maker Advanced Power Technology
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