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Advanced Power Technology

APT40M70JVFR Datasheet Preview

APT40M70JVFR Datasheet

POWER MOS V FREDFET

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APT40M70JVFR
400V 53A 0.070
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
www.DataSheet4FU.acsomter Switching
• Avalanche Energy Rated
• Lower Leakage
• Popular SOT-227 Package
FAST RECOVERY BODY DIODE
SS
G D SOT-227
ISOTOP®
"UL Recognized"
D
G
S
MAXIMUM RATINGS
Symbol Parameter
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
PD Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
All Ratings: TC = 25°C unless otherwise specified.
APT40M70JVFR
UNIT
400 Volts
53
Amps
212
±30
Volts
±40
450 Watts
3.6 W/°C
-55 to 150
300
°C
53 Amps
50
2500
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, 26.5A)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 320V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
400
2
0.07
250
1000
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Ohms
µA
nA
Volts




Advanced Power Technology

APT40M70JVFR Datasheet Preview

APT40M70JVFR Datasheet

POWER MOS V FREDFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on) Turn-on Delay Time
t r Rise Time
td(off) Turn-off Delay Time
t f Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6
www.DataSheeSt4OU.UcoRmCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
APT40M70JVFR
MIN TYP MAX UNIT
7410 8890
1140 1600 pF
450 675
330 495
40 60 nC
127 190
16 32
16 32
ns
54 80
5 10
MIN TYP MAX UNIT
53
Amps
212
1.3 Volts
15 V/ns
250
ns
500
1.6
µC
5.5
15
Amps
27
THERMAL / PACKAGE CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
VIsolation
Torque
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
MIN
2500
TYP
MAX
0.28
40
10
UNIT
°C/W
Volts
lb•in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.78mH, RG = 25, Peak IL = 53A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID53A di/dt 700A/µs VR 100V TJ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
0.1
0.05
D=0.5
0.2
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT40M70JVFR
Description POWER MOS V FREDFET
Maker Advanced Power Technology
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