APT40N60B2CF Datasheet | Advanced Power Technology

600V 40A 0.110Ω APT40N60B2CF APT40N60LCF APT40N60B2CFG- APT40N60LCFG- - G Denotes Ro HS pliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction FREDFET T-Max TM TO-264 - Ultra Low RDS(ON) - Low Miller Capacitance - Ultra Low Gate Charge, Qg - Avalanche Energy Rated .. - Extreme dv/dt Rated - Intrinsic Fast-Recovery Body Diode - Extreme Low Reverse Recovery Charge - Ideal For ZVS Applications - Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current All Ratings: TC = 25°C unless otherwise specified. APT40N60B2CF(G)_LCF(G) UNIT Volts 600 40 26 80 ±30 417 3.33 -55 to 150 260 80 20 7 4 Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125°C) Avalanche Current Volts Watts W/°C °C V/ns Amps m J Repetitive Avalanche Energy 1 690 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS...