COOLMOS
Power Semiconductors
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
www.DataShee•t4EUx.tcroemme dv/dt Rated
600V 40A 0.110Ω
APT40N60B2CF APT40N60LCF
APT40N60B2CFG* APT40N60LCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction FREDFET
T-MaxTM
TO-264
• Intrinsic Fast-Recovery Body Diode
• Extreme Low Reverse Recovery Charge
• Ideal For ZVS Applications
• Popular T-MAX™ or TO-264 Package
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT40N60B2CF(G)_LCF(G) UNIT
VDSS
ID
IDM
VGS
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
600 Volts
40
26 Amps
80
±30 Volts
417 Watts
3.33 W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125°C)
Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
260
80
20
1
690
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 20A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2mA)
600
0.110
4.2
3400
±100
345
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Volts
Ohms
µA
nA
Volts
