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Advanced Power Technology

APT47N60SC3 Datasheet Preview

APT47N60SC3 Datasheet

Super Junction MOSFET

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APT47N60BC3
APT47N60SC3
600V 47A 0.070
Super Junction MOSFET
COOLMOS
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
www.DataShee••t4UAU.lvctoarmalaLnocwheGEanteerCgyhaRragtee,dQg
• TO-247 or Surface Mount D3PAK Package
TO-247
D3PAK
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT47N60BC3_SC3 UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
600 Volts
47
Amps
141
±20 Volts
±30
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
417
3.33
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
260
50
20
1
1800
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 30A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.7mA)
MIN
600
2.10
TYP
0.06
0.5
3
MAX
0.07
25
250
±100
3.9
UNIT
Volts
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOScomprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"




Advanced Power Technology

APT47N60SC3 Datasheet Preview

APT47N60SC3 Datasheet

Super Junction MOSFET

No Preview Available !

DYNAMIC CHARACTERISTICS
APT47N60BC3_SC3
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
www.DataSheet4U.Ecoomn
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 47A @ 25°C
RESISTIVE SWITCHING
VGS = 13V
VDD = 380V
ID = 47A @ 125°C
RG = 1.8
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 47A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 400V VGS = 15V
ID = 47A, RG = 5
MIN TYP MAX UNIT
7015
2565
210
pF
260
29 nC
110
18
27
110 ns
8
670
980
1100
µJ
1200
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -47A)
t rr Reverse Recovery Time (IS = -47A, dlS/dt = 100A/µs, VR = 350V)
Q rr Reverse Recovery Charge (IS = -47A, dlS/dt = 100A/µs, VR = 350V)
dv/dt Peak Diode Recovery dv/dt 5
47
141 Amps
1.2 Volts
580 ns
23 µC
6 V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.30
62
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 36.0mH, RG = 25, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID47A di/dt 700A/µs VR VDSS TJ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0 10-5
0.9
0.7
0.5 Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0


Part Number APT47N60SC3
Description Super Junction MOSFET
Maker Advanced Power Technology
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APT47N60SC3 Datasheet PDF





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