DYNAMIC CHARACTERISTICS
APT47N60BC3_SC3
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
www.DataSheet4U.Ecoomn
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 47A @ 25°C
RESISTIVE SWITCHING
VGS = 13V
VDD = 380V
ID = 47A @ 125°C
RG = 1.8Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 47A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 400V VGS = 15V
ID = 47A, RG = 5Ω
MIN TYP MAX UNIT
7015
2565
210
pF
260
29 nC
110
18
27
110 ns
8
670
980
1100
µJ
1200
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -47A)
t rr Reverse Recovery Time (IS = -47A, dlS/dt = 100A/µs, VR = 350V)
Q rr Reverse Recovery Charge (IS = -47A, dlS/dt = 100A/µs, VR = 350V)
dv/dt Peak Diode Recovery dv/dt 5
47
141 Amps
1.2 Volts
580 ns
23 µC
6 V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.30
62
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID47A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0 10-5
0.9
0.7
0.5 Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
