Advanced Power Technology APT5024BLLG
Power MOSFET
| Part No. | APT5024BLLG |
|---|---|
| Datasheet | APT5024BLLG Download |
| Manufacturer |  Advanced Power Technology |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT5024BLL_SLL(G) UNIT 500 Volts 22 Amps 88 ±30 Volts ±40 265 Watts 2.12 W/°C -55 to 150 °C 300 22 Amps 30 mJ 960 STATICELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 22 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 11A) IDSS Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)...
