APT6015B2VFR
APT6015B2VFR APT6015LVFR
600V 38A 0.150Ω
POWER MOS V® FREDFET B2VFR
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVFR
- Fast Recovery Body Diode
- Lower Leakage
- Faster Switching MAXIMUM RATINGS
- Avalanche Energy Rated
- T-MAX™ or TO-264 Package
S All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM
TJ,TSTG TL IAR EAR EAS
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche...
