Advanced Power Technology APT6015B2VFR
Power MOSFET
| Part No. | APT6015B2VFR |
|---|---|
| Datasheet | APT6015B2VFR Download |
| Manufacturer |  Advanced Power Technology |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
● Avalanche Energy Rated● T-MAX™ or TO-264 Package D G S All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT6015B2VFR_LVFR 600 38 152 ±30 ±40 520 4.16 -55 to 150 300 38 50 2500 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC
ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 38 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5...
