APT6030SVR
APT6030BVR APT6030SVR
600V 21A 0.300Ω
POWER MOS V® MOSFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-247
D3PAK SVR
- Faster Switching
- Avalanche Energy Rated
- Lower Leakage
- TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol Parameter
VDSS ID IDM VGS
VGSM
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
S All Ratings: TC = 25°C...
