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Advanced Power Technology
Advanced Power Technology

APTGT100DA60TG Datasheet Preview

APTGT100DA60TG Datasheet

IGBT Power Module

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APTGT100DA60TG pdf
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APTGT100DA60TG
Boost chopper
Trench + Field Stop IGBT®
Power Module
VB US SENS E
VBUS
NT C2
CR1
Q2
G2
E2
0/VBU S
OUT
NT C1
VBUS
VBUS
SENSE
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
VCES = 600V
IC = 100A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
150
100
200
±20
340
200A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5



Advanced Power Technology
Advanced Power Technology

APTGT100DA60TG Datasheet Preview

APTGT100DA60TG Datasheet

IGBT Power Module

No Preview Available !

APTGT100DA60TG pdf
APTGT100DA60TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 100A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.7
V
VGE = VCE , IC = 1.5 mA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
6100
390
190
pF
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
115
45
225
55
130
50
300
70
0.4
0.875
2.5
3.5
ns
ns
mJ
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 150°C
600
V
250
500
µA
IF DC Forward Current
Tc = 80°C
100
A
VF Diode Forward Voltage
IF = 100A
VGE = 0V
Tj = 25°C
Tj = 150°C
1.6 2
1.5
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 100A
VR = 300V
di/dt =2000A/µs
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
125
220
4.7
9.9
ns
µC
Er Reverse Recovery Energy
Tj = 25°C
Tj = 150°C
1.1
2.4
mJ
www.microsemi.com
2-5


Part Number APTGT100DA60TG
Description IGBT Power Module
Maker Advanced Power Technology
Total Page 5 Pages
PDF Download
APTGT100DA60TG pdf
APTGT100DA60TG Datasheet PDF
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