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Advanced Power Technology

APTGT100DU120TG Datasheet Preview

APTGT100DU120TG Datasheet

IGBT Power Module

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APTGT100DU120TG
Dual common source
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 100A @ Tc = 80°C
G1
E1
NTC1
C1
Q1
C2
Q2
E
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
G2
Features
E2 Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
NTC2
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
G2
E2
C1 E
C2
C2
E1 E2 NTC2
G1 G2 NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
140
100
200
±20
480
200A @ 1100V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5




Advanced Power Technology

APTGT100DU120TG Datasheet Preview

APTGT100DU120TG Datasheet

IGBT Power Module

No Preview Available !

APTGT100DU120TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1200V
250 µA
VGE =15V
IC = 100A
Tj = 25°C 1.4 1.7 2.1
Tj = 125°C
2.0
V
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9
Tj = 125°C
Tj = 125°C
Min Typ Max Unit
7200
400 pF
300
260
30
420 ns
70
290
50
520 ns
90
10
mJ
10
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1200V
IF = 100A
VGE = 0V
1200
V
Tj = 25°C
Tj = 125°C
250
500
µA
Tc = 80°C
100
A
Tj = 25°C
Tj = 125°C
1.6 2.1
1.6
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 100A
VR = 600V
di/dt =2000A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
280
9
18
ns
µC
Er Reverse Recovery Energy
Tj = 25°C
Tj = 125°C
5
9
mJ
www.microsemi.com
2-5


Part Number APTGT100DU120TG
Description IGBT Power Module
Maker Advanced Power Technology
Total Page 5 Pages
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