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Advanced Power Technology
Advanced Power Technology

APTGT200H60 Datasheet Preview

APTGT200H60 Datasheet

Full - Bridge Trench Field Stop IGBT Power Module

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APTGT200H60 pdf
APTGT200H60
Full - Bridge
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
Q1
G1
VBUS
Q3
E1 OUT1 OUT2
Q2
G2
Q4
E2
0/VBUS
G3
E3
G4
E4
G1 VBUS
E1
E3
G3
OUT1
0/VBUS
OUT2
G2
E2
E4
G4
VCES = 600V
IC = 200A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
290
200
400
±20
625
400A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5



Advanced Power Technology
Advanced Power Technology

APTGT200H60 Datasheet Preview

APTGT200H60 Datasheet

Full - Bridge Trench Field Stop IGBT Power Module

No Preview Available !

APTGT200H60 pdf
APTGT200H60
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
www.dataIsChEeSet4u.cZoemro Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 200A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.7
V
VGE = VCE , IC = 2 mA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
12.3
0.8 nF
0.4
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 5
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 5
115
45
225
55
130
50
300
70
ns
ns
3.5 mJ
7
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 150°C
600
V
250
500
µA
IF(AV) Maximum Average Forward Current
50% duty cycle Tc = 80°C
200
A
VF Diode Forward Voltage
IF = 200A
VGE = 0V
Tj = 25°C
Tj = 150°C
1.6 2
1.5
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 200A
VR = 300V
di/dt =2200A/µs
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
130
225
9
19
ns
µC
APT website – http://www.advancedpower.com
2-5


Part Number APTGT200H60
Description Full - Bridge Trench Field Stop IGBT Power Module
Maker Advanced Power Technology
Total Page 5 Pages
PDF Download
APTGT200H60 pdf
APTGT200H60 Datasheet PDF
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