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Advanced Power Technology
Advanced Power Technology

APTGT30DA170D1 Datasheet Preview

APTGT30DA170D1 Datasheet

IGBT Power Module

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APTGT30DA170D1 pdf
APTGT30DA170D1
Boost chopper
Trench IGBT® Power Module
www.datasheet4u.com
VCES = 1700V
IC = 30A @ Tc = 80°C
3
Q2
6
7
1
2
321
4
5
7
6
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Kelvin emitter for easy drive
Low stray inductance
- M5 power connectors
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operation Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
45
30
70
±20
210
70A@1700V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3



Advanced Power Technology
Advanced Power Technology

APTGT30DA170D1 Datasheet Preview

APTGT30DA170D1 Datasheet

IGBT Power Module

No Preview Available !

APTGT30DA170D1 pdf
APTGT30DA170D1
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage
www.dataIsChEeSet4u.cZoemro Gate Voltage Collector Current
VGE = 0V, IC = 1.5mA
VGE = 0V, VCE = 1700V
1700
V
3 mA
VCE(on)
VGE(th)
IGES
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 15V
IC = 30A
Tj = 25°C
Tj = 125°C
2.0 2.4
2.4
V
VGE = VCE , IC = 1.5mA
5.2 5.8 6.4 V
VGE = 20V, VCE = 0V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Cres
Td(on)
Tr
Td(off)
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eoff Turn Off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 25V
f = 1MHz
2500
90
pF
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 30A
RG = 18
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 30A
RG = 18
200
100
750
90
230
100
850
115
ns
ns
22 mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VF Diode Forward Voltage
Er Reverse Recovery Energy
IF = 50A
VGE = 0V
IF = 50A
VR = 900V
di/dt =990A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.8 2.2
1.9
V
8
mJ
15
Qrr Reverse Recovery Charge
IF = 50A
VR = 900V
di/dt =990A/µs
Tj = 25°C
Tj = 125°C
18
29
µC
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
VISOL
TJ
TSTG
TC
Torque
Wt
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
For terminals
To Heatsink
Package Weight
IGBT
Diode
M5
M6
Min Typ Max Unit
0.6
0.9
°C/W
3500
V
-40 150
-40 125 °C
-40 125
2
3
3.5
5
N.m
180 g
APT website – http://www.advancedpower.com
2-3


Part Number APTGT30DA170D1
Description IGBT Power Module
Maker Advanced Power Technology
Total Page 3 Pages
PDF Download
APTGT30DA170D1 pdf
APTGT30DA170D1 Datasheet PDF
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