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Advanced Power Technology
Advanced Power Technology

APTGT35X120BTP3 Datasheet Preview

APTGT35X120BTP3 Datasheet

IGBT Power Module

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APTGT35X120BTP3 pdf
APTGT35X120RTP3
APTGT35X120BTP3
Input rectifier bridge + Brake
+ 3 Phase Bridge
Trenchwww.datasheet4u.com IGBT® Power Module
VCES = 1200V
IC = 35A @ Tc = 80°C
APTGT35X120RTP3: Without Brake (Pin 7 & 14 not connected)
21 20 19
18 17
16 15
14 13 12 11 10
Application
AC Motor control
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Low conduction losses
22
23
9
8
Stable temperature behavior
Very rugged
7 Solderable terminals for easy PCB mounting
24 Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
1 2 3 45 6
Low profile
All ratings @ Tj = 25°C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier Absolute maximum ratings
Symbol
Parameter
VRRM
ID
Repetitive Peak Reverse Voltage
DC Forward Current
IFSM Surge Forward Current
tp = 10ms
TC = 80°C
Tj = 25°C
Tj = 150°C
Max ratings
1600
80
320
260
Unit
V
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-4



Advanced Power Technology
Advanced Power Technology

APTGT35X120BTP3 Datasheet Preview

APTGT35X120BTP3 Datasheet

IGBT Power Module

No Preview Available !

APTGT35X120BTP3 pdf
APTGT35X120RTP3
APTGT35X120BTP3
IGBT & Diode Brake (only for APTGT35X120BTP3) Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
www.datashIeCet4u.coCmontinuous Collector Current
ICM Pulsed Collector Current
VGE Gate – Emitter Voltage
PD Maximum Power Dissipation
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
IF DC Forward Current
TC = 80°C
Max ratings
1200
40
25
65
±20
160
15
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
IF
IFRM
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Save Operating Area
DC Forward Current
Repetitive Peak Forward Current
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
TC = 80°C
tp = 1ms
Max ratings
1200
55
35
80
±20
200
80A @ 1100V
35
50
Unit
V
A
V
W
A
Unit
V
A
V
W
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
IR Reverse Current
VF Forward Voltage
RthJC Junction to Case
Test Conditions
Min Typ Max Unit
VR = 1600V
Tj = 150°C
3
mA
IF = 50A
Tj = 150°C
1.0 V
0.65 °C/W
IGBT Brake & Diode (only for APTGT35X120BTP3) Electrical Characteristics
Symbol Characteristic
Test Conditions
ICES
VCE(on)
VGE(th)
IGES
Cies
Coes
Cres
VF
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Voltage
VGE = 0V, VCE = 1200V
VGE = 15V
IC = 25A
Tj = 25°C
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
VGE = 0V,
VCE = 25V
f = 1MHz
VGE = 0V
IF = 35A
Tj = 25°C
Tj = 125°C
RthJC Junction to Case
IGBT
Diode
Min
1.4
5.0
Typ Max Unit
4 mA
1.7 2.1
2.0
V
5.8
1808
95
82
6.5
600
V
nA
pF
2.3 2.7
2.5
V
0.6
1.5
°C/W
APT website – http://www.advancedpower.com
2-4


Part Number APTGT35X120BTP3
Description IGBT Power Module
Maker Advanced Power Technology
Total Page 4 Pages
PDF Download
APTGT35X120BTP3 pdf
APTGT35X120BTP3 Datasheet PDF
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