APTGU30DDA60T3 Key Features
- Power MOS 7® Punch Through (PT) IGBT
- Low conduction loss
- Ultra fast tail current shutoff
- Low gate charge
- Switching frequency capability in the 200kHz range
- Soft recovery parallel diodes
- Low diode VF
- Kelvin emitter for easy drive
- Very low stray inductance
- Symmetrical design