Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
G2
G4
S2 0/VBUS
S4.
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OUT1 G1 S1 VBUS 0/VBUS G2 S2.
Benefits.
S3 G3 OUT2
S4 G4
Outstanding performance at high fre.
Full PDF Text Transcription for APTM120H29F (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APTM120H29F. For precise diagrams, and layout, please refer to the original PDF.
APTM120H29F Full - Bridge MOSFET Power Module VB US Q1 Q3 VDSS = 1200V RDSon = 290mΩ max @ Tj = 25°C ID = 34A @ Tc = 25°C Application • • • • Welding converters Switched ...
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ID = 34A @ Tc = 25°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 OUT1 OUT2 G3 S1 Q2 S3 Q4 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 G4 S2 0/VBUS S4 • • www.DataSheet4U.
APTM120H29F Datasheet
