BFR91G Datasheet RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacturer: Advanced Power Technology

Overview: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR91 BFR91G * G Denotes RoHS Compliant, Pb Free Terminal.

Download the BFR91G datasheet PDF. This datasheet also includes the BFR91 variant, as both parts are published together in a single manufacturer document.

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BFR91G rf & microwave discrete low power transistors by Advanced Power Technology - Datasheet Preview

Datasheet Details

Part number	BFR91G
Manufacturer	Advanced Power Technology
File Size	118.26 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Download	BFR91G Download (PDF)

General Description

: Designed primarily for use in high-gain, low noise, small-signal amplifiers.

Also used in applications requiring fast switching times.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TA = 60ºC Derate above 60ºC Storage Temperature RθJA Total Device Dissipation @ TA = 60ºC Derate above 60ºC Value 12 15 3.0 35 180 2.0 -65 to +150 500 Unit Vdc Vdc Vdc mA mWatts mW/ ºC ºC ºC/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Key Features

High Current-Gain.
Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA.
Low Noise Figure.
NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz.
High Power Gain.
Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz Macro T (STYLE #2).

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