Datasheet4U Logo Datasheet4U.com

MRF5943C Datasheet RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacturer: Advanced Power Technology

Datasheet Details

Part number MRF5943C
Manufacturer Advanced Power Technology
File Size 88.48 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Download MRF5943C Download (PDF)

General Description

: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC P D TSTG Collector Current Total Device Dissipation Storage Temperature Thermal Data RTH(J-C) Thermal Resistance, Junction – Case Value 30 40 3.5 400 1.0 -65 to +150 Unit V V V mA W °C 125 ºC/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS.

Key Features

  • Maximum Available Gain = 17dB @ 300MHz.
  • High fT.
  • 1.2 GHz typical 1. Emitter 2. Base 3. Collector TO-39.