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MS1000 Datasheet

Manufacturer: Advanced Power Technology
MS1000 datasheet preview

MS1000 Details

Part number MS1000
Datasheet MS1000_AdvancedPowerTechnology.pdf
File Size 117.02 KB
Manufacturer Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS
MS1000 page 2 MS1000 page 3

MS1000 Overview

The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB munications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36...

MS1000 Key Features

  • 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM MON EMITTER CONFIGURATION

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