Datasheet4U Logo Datasheet4U.com

MS1000 Datasheet RF & MICROWAVE TRANSISTORS

Manufacturer: Advanced Power Technology

Datasheet Details

Part number MS1000
Manufacturer Advanced Power Technology
File Size 117.02 KB
Description RF & MICROWAVE TRANSISTORS
Download MS1000 Download (PDF)

General Description

: The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications.

Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36 4.0 20 270 200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.65 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1000 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS www.datasheet4u.

Key Features

  • 30 MHz 28 VOLTS IMD = -30 dB GOLD.