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MS1000 - RF & MICROWAVE TRANSISTORS

Datasheet Summary

Description

The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications.

Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.

Features

  • 30 MHz 28 VOLTS IMD = -30 dB GOLD.

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Datasheet preview – MS1000

Datasheet Details

Part number MS1000
Manufacturer Advanced Power Technology
File Size 117.02 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1000 Datasheet
Additional preview pages of the MS1000 datasheet.

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Full PDF Text Transcription

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1000 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS www.datasheet4u.com Features • • • • • • • 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36 4.
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