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MS1000 Datasheet

Manufacturer: Advanced Power Technology
MS1000 datasheet preview

Datasheet Details

Part number MS1000
Datasheet MS1000_AdvancedPowerTechnology.pdf
File Size 117.02 KB
Manufacturer Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS
MS1000 page 2 MS1000 page 3

MS1000 Overview

The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB munications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36...

MS1000 Key Features

  • 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM MON EMITTER CONFIGURATION

MS1000 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
SAFRAN MS1000 Single axis analog accelerometer SAFRAN
SAFRAN MS1000L Single axis analog accelerometer SAFRAN
SAFRAN MS1000T Single axis analog accelerometer SAFRAN
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